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NTMFS4934NT1G

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NTMFS4934NT1G

MOSFET N-CH 30V 17.1A/147A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4934NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 17.1A at a typical ambient temperature (Ta) and 147A at the case temperature (Tc). With a low on-resistance of 2mOhm at 30A and 10Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 930mW (Ta) and 69.44W (Tc). Its gate charge is specified at 34 nC maximum at 4.5Vgs, and input capacitance (Ciss) is 5505 pF maximum at 15Vds. Operating within a temperature range of -55°C to 150°C, it is housed in a 5-DFN (5x6) package, also known as 8-PowerTDFN, 5 leads, suitable for surface mounting. This MOSFET is utilized in industries such as automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.1A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)930mW (Ta), 69.44W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5505 pF @ 15 V

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