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NTMFS4933NT3G

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NTMFS4933NT3G

MOSFET N-CH 30V 20A/210A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4933NT3G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 30V drain-source voltage (Vdss) and a continuous drain current capability of 20A at ambient temperature, scaling to 210A at case temperature, this device is suitable for high-power switching. Its low on-resistance of 1.2mOhm at 30A and 10V exemplifies efficient power transfer. The MOSFET offers a gate charge (Qg) of 62.1 nC at 4.5V and input capacitance (Ciss) of 10930 pF at 15V. Packaged in a 5-DFN (5x6) (8-SOFL) format for surface mounting, it operates across a temperature range of -55°C to 150°C. This component finds application in automotive systems, power management, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.06W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs62.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds10930 pF @ 15 V

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