NTMFS4933NT1G
MOSFET N-CH 30V 20A/210A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMFS4933NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and supports a continuous drain current of 20A at ambient temperature (Ta) and 210A at case temperature (Tc). Its low on-resistance (Rds On) of 1.2mOhm at 30A and 10V gate drive makes it highly efficient for power conversion. The MOSFET offers a maximum power dissipation of 1.06W (Ta) and 104W (Tc). Key parameters include a gate charge (Qg) of 62.1 nC at 4.5V and an input capacitance (Ciss) of 10930 pF at 15V. The NTMFS4933NT1G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on a tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.06W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10930 pF @ 15 V |