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NTMFS4931NT3G

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NTMFS4931NT3G

MOSFET N-CH 30V 23A/246A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4931NT3G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage (Vdss) of 30 V and a continuous drain current (Id) of 23 A at 25°C ambient, scaling to 246 A when measured at the case. The low on-resistance (Rds On) of 1.1 mOhm at 30 A and 10 V drive voltage, coupled with a maximum gate charge (Qg) of 128 nC at 10 V, ensures high switching performance. Input capacitance (Ciss) is specified at a maximum of 9821 pF at 15 V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is housed in a 5-DFN (5x6) package with 8-SOFL pinout, suitable for surface mounting. It supports drive voltages between 4.5V and 10V with a maximum gate-source voltage (Vgs) of ±20V. This component is commonly utilized in automotive, industrial, and power supply sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)950mW (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9821 pF @ 15 V

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