NTMFS4931NT1G-IRH1
NTMFS4931 - MOSFET N CHANNEL SINManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4931NT1G-IRH1 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 23 A at 25°C (Ta). With a low on-resistance (Rds On) of 1.1 mOhm at 30 A and 10 V, it minimizes conduction losses. The MOSFET is housed in an 8-PowerTDFN, 5-lead package (5-DFN (5x6) (8-SOFL)) suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 128 nC at 10 V and an input capacitance (Ciss) of 9821 pF at 15 V. Drive voltages range from 4.5 V to 10 V. This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 950 mW (Ta). The NTMFS4931NT1G-IRH1 is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9821 pF @ 15 V |
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