NTMFS4931NT1G
MOSFET N-CH 30V 23A/246A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4931NT1G is a N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30 V and offers a continuous drain current capability of 23A at 25°C ambient and 246A at 25°C case temperature. With a low on-resistance of 1.1 mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in an 8-PowerTDFN, 5-Lead (5x6) package, suitable for surface mount assembly. Key parameters include a gate charge (Qg) of 128 nC at 10V Vgs and input capacitance (Ciss) of 9821 pF at 15V Vds. The maximum power dissipation is rated at 950mW (Ta). This component is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 246A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9821 pF @ 15 V |
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