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NTMFS4927NT3G

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NTMFS4927NT3G

MOSFET N-CH 30V 7.9A/38A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4927NT3G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30 V drain-source breakdown voltage and supports a continuous drain current of 7.9 A at 25°C ambient temperature and 38 A at 25°C case temperature. The Rds On is rated at a maximum of 7.3 mOhm at 30 A and 10 V gate drive. The device offers a power dissipation of 920 mW (Ta) and 20.8 W (Tc). It is housed in an 8-PowerTDFN, 5-lead package (5x6) and utilizes a surface mount configuration. Key electrical parameters include a gate charge of 16 nC at 10 V and input capacitance of 913 pF at 15 V. This MOSFET is suitable for use in automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.9A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs7.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)920mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds913 pF @ 15 V

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