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NTMFS4927NT1G

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NTMFS4927NT1G

MOSFET N-CH 30V 7.9A/38A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4927NT1G is an N-Channel Power MOSFET designed for efficient power management. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 7.9A at 25°C ambient temperature, scaling to 38A under controlled case temperature. With a maximum Rds(on) of 7.3mOhm at 30A and 10V Vgs, it ensures low conduction losses. The device supports a gate drive voltage range from 4.5V to 10V and has a gate charge of 16 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 913 pF at 15V. Featuring a 5-DFN (5x6) package with 5 leads, this MOSFET is suitable for surface mount applications. The NTMFS4927NT1G is engineered for operation across a wide temperature range of -55°C to 150°C (TJ) and finds application in various industries including automotive and industrial power systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.9A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs7.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)920mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds913 pF @ 15 V

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