NTMFS4927NCT1G
MOSFET N-CH 30V 7.9A/38A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4927NCT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 7.9A at 25°C ambient and 38A at 25°C case temperature. With a low on-resistance (Rds On) of 7.3mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device supports drive voltages from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 8 nC at 4.5V and a maximum input capacitance (Ciss) of 913 pF at 15V. Power dissipation is rated at 920mW (Ta) and 20.8W (Tc). The NTMFS4927NCT1G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 913 pF @ 15 V |
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