NTMFS4926NT1G
MOSFET N-CH 30V 9A/44A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4926NT1G is an N-Channel Power MOSFET designed for efficient power management applications. Featuring a 30V drain-source breakdown voltage and offering continuous drain current capabilities of 9A (ambient) and 44A (case), this device excels in demanding thermal environments. Its low on-resistance of 7mOhm at 30A and 10V gate drive voltage, coupled with a maximum gate charge of 17.3 nC, ensures minimal conduction and switching losses. The device boasts a maximum power dissipation of 920mW (ambient) and 21.6W (case), supported by a low thermal resistance. Packaged in an 8-PowerTDFN, 5-lead (5x6) footprint, the NTMFS4926NT1G is suitable for surface mounting. This component finds application in automotive, industrial, and consumer electronics where high efficiency power conversion is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 21.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1004 pF @ 15 V |
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