NTMFS4926NET1G
MOSFET N-CH 30V 9A/44A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4926NET1G is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 7mOhm at 30A and 10V Vgs, enabling minimal conduction losses. Its continuous drain current capability is 9A at 25°C ambient and 44A at 25°C case temperature, with a maximum power dissipation of 920mW (Ta) and 21.6W (Tc). The MOSFET utilizes Metal Oxide technology and is housed in a compact, surface-mount 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads. Key electrical parameters include a gate charge (Qg) of 17.3 nC at 10V Vgs and input capacitance (Ciss) of 1004 pF at 15V Vds. It operates reliably within an extended temperature range of -55°C to 150°C. This component is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 21.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1004 pF @ 15 V |
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