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NTMFS4925NT3G

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NTMFS4925NT3G

MOSFET N-CH 30V 9.7A/48A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4925NT3G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current capability of 9.7A at ambient temperature (Ta) and 48A at case temperature (Tc). With a low on-resistance (Rds On) of 5.6mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge (Qg) of 21.5 nC at 10V and a maximum input capacitance (Ciss) of 1264 pF at 15V. The NTMFS4925NT3G is packaged in an 8-PowerTDFN, 5-lead (5x6) surface-mount package, suitable for operation across a temperature range of -55°C to 150°C. Maximum power dissipation is 920mW (Ta) and 23.2W (Tc). This component is commonly utilized in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.7A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs5.6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)920mW (Ta), 23.2W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1264 pF @ 15 V

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