NTMFS4925NT1G
MOSFET N-CH 30V 9.7A/48A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4925NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 9.7 A at ambient temperature (Ta) and 48 A at case temperature (Tc). With a low on-resistance of 5.6 mOhm at 30 A and 10 V Vgs, it offers efficient power handling. The MOSFET supports drive voltages from 4.5 V to 10 V, with a maximum gate charge of 21.5 nC at 10 V. Input capacitance (Ciss) is maximized at 1264 pF at 15 V. The NTMFS4925NT1G is packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) package suitable for surface mounting and is supplied on tape and reel. Its power dissipation is rated at 920 mW (Ta) and 23.2 W (Tc). This component is utilized across industries such as automotive and industrial power management. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 23.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 15 V |
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