NTMFS4925NET1G
MOSFET N-CH 30V 9.7A/48A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4925NET1G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage (Vdss) and offers continuous drain current capabilities of 9.7A at ambient temperature (Ta) and 48A at case temperature (Tc). Its low on-resistance (Rds On) of 6mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses.
With a maximum power dissipation of 920mW (Ta) and 23.2W (Tc), the NTMFS4925NET1G is suitable for demanding thermal environments. The device utilizes advanced MOSFET technology and is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) for efficient heat dissipation and compact board space. Key electrical parameters include a gate charge (Qg) of 21.5 nC at 10V Vgs and an input capacitance (Ciss) of 1264 pF at 15V Vds. This device is commonly found in automotive, industrial, and consumer electronics power management solutions. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 23.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 15 V |
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