NTMFS4923NET3G
MOSFET N-CH 30V 12.7A/91A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4923NET3G is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 12.7A at 25°C ambient and 91A at 25°C case temperature. With a low on-resistance (Rds On) of 3.3mOhm at 30A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 22 nC at 4.5V. Input capacitance (Ciss) is rated at 4850 pF maximum at 15V. The NTMFS4923NET3G is housed in a 5-DFN (5x6) package with 8-SOFL pinout, suitable for surface mounting. Maximum power dissipation is 930mW (Ta) and 48W (Tc). Operating temperature range is -40°C to 150°C (TJ). This MOSFET finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 15 V |
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