NTMFS4922NET1G
MOSFET N-CH 30V 17.1A/147A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4922NET1G is an N-Channel Power MOSFET designed for efficient power management applications. It features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 17.1A at a 25°C ambient temperature, scaling to 147A at a 25°C case temperature. With a low on-resistance (Rds On) of 2mOhm at 30A and 10V Vgs, this MOSFET minimizes conduction losses. The device supports drive voltages from 4.5V to 10V and has a maximum gate charge of 76.5 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 5505 pF at 15V. This surface mount component comes in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 leads. Power dissipation is 930mW at 25°C ambient and 69.44W at 25°C case. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.1A (Ta), 147A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 69.44W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 76.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5505 pF @ 15 V |
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