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NTMFS4921NT3G

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NTMFS4921NT3G

MOSFET N-CH 30V 8.8A/58.5A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NTMFS4921NT3G by onsemi is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-to-Source voltage (Vdss) and supports a continuous drain current of 8.8A at 25°C ambient and 58.5A at 25°C case temperature. With a maximum on-resistance (Rds On) of 6.95mOhm at 30A and 10V, it offers efficient power handling. The device is housed in a 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5 Leads configuration, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 25 nC at 11.5V and input capacitance (Ciss) of 1400 pF at 12V. Maximum power dissipation is rated at 870mW (Ta) and 38.5W (Tc). This MOSFET is utilized in industries such as automotive, industrial power control, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 58.5A (Tc)
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)870mW (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 12 V

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