NTMFS4921NT1G
MOSFET N-CH 30V 8.8A/58.5A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4921NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30 V Drain-to-Source Voltage (Vdss) and offers a continuous drain current capability of 8.8 A at ambient temperature and 58.5 A at case temperature. With a low on-resistance of 6.95 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5 V to 11.5 V, with a maximum gate charge (Qg) of 25 nC at 11.5 V. Input capacitance (Ciss) is specified at 1400 pF max at 12 V. Packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) configuration, it is supplied on tape and reel for automated assembly. Maximum power dissipation is 870 mW at ambient temperature and 38.5 W at case temperature. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 58.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.95mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 12 V |
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