NTMFS4899NFT1G
MOSFET N-CH 30V 10.4A/75A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4899NFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 10.4A at 25°C ambient and 75A at 25°C case temperature. With a low on-resistance (Rds On) of 5mOhm maximum at 30A and 10V gate drive, it minimizes power loss. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key capacitance parameters include a maximum input capacitance (Ciss) of 1600pF at 12V and a maximum gate charge (Qg) of 25nC at 10V. The NTMFS4899NFT1G is housed in a 5-DFN (5x6) 8-SOFL package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 150°C. Maximum power dissipation is 920mW (Ta) or 48W (Tc). This MOSFET is commonly utilized in power management circuits, automotive applications, and industrial systems requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 12 V |
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