NTMFS4898NFT3G
MOSFET N-CH 30V 13.2A/117A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4898NFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 13.2 A at ambient temperature and 117 A at case temperature. With a low on-resistance (Rds On) of 3 mOhm at 30 A and 10 V, it offers efficient power handling. The device supports drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V. Key electrical parameters include a maximum gate charge (Qg) of 49.5 nC at 10 V and a maximum input capacitance (Ciss) of 3233 pF at 12 V. Power dissipation capabilities are 930 mW at ambient and 73.5 W at case temperature. The NTMFS4898NFT3G is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.2A (Ta), 117A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3233 pF @ 12 V |
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