NTMFS4898NFT1G
MOSFET N-CH 30V SO-8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4898NFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 13.2A at 25°C ambient temperature, scaling to 117A under 25°C case temperature. With a low on-resistance of 3mOhm at 30A and 10V Vgs, it minimizes conduction losses. Key parameters include a maximum gate charge (Qg) of 49.5 nC at 10V and an input capacitance (Ciss) of 3233 pF at 12V Vds. The MOSFET is housed in an 8-PowerTDFN (5x6) package, also identified as 5-DFN (5x6) (8-SOFL), suitable for surface mount configurations. This component finds application in power management systems across automotive and industrial sectors. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.2A (Ta), 117A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3233 pF @ 12 V |
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