NTMFS4897NFT3G
MOSFET N-CH 30V 17A/171A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4897NFT3G is a N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source voltage rating and supports continuous drain currents of 17A at ambient temperature (Ta) and 171A at case temperature (Tc). With a low on-resistance of 2mOhm at 22A and 10V Vgs, it minimizes conduction losses. The NTMFS4897NFT3G offers a maximum power dissipation of 950mW (Ta) and 96.2W (Tc), and its gate charge is specified at 83.6 nC maximum at 10V Vgs. Input capacitance (Ciss) is a maximum of 5660 pF at 15V Vds. Packaged in an 8-PowerTDFN, 5-Lead (5x6) 5-DFN (8-SOFL) and supplied on tape and reel, this MOSFET is suitable for demanding automotive and industrial power systems. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 171A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta), 96.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 83.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
