NTMFS4854NST3G
MOSFET N-CH 25V 15.2A/149A SO8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4854NST3G is an N-Channel SENSEFET® power MOSFET designed for high-efficiency power management applications. This device features a drain-source breakdown voltage of 25 V and a continuous drain current capability of 15.2 A at a case temperature of 25°C, escalating to 149 A under typical thermal conditions. With a low on-resistance of 2.5 mOhm at 15 A and 10 V, it minimizes conduction losses. The SO-8FL package facilitates efficient thermal dissipation, offering a maximum power dissipation of 900mW at 25°C (Ta) and 86.2W at 25°C (Tc). Key electrical parameters include a gate charge (Qg) of 85 nC (max) at 11.5 V and input capacitance (Ciss) of 4830 pF (max) at 12 V. This MOSFET is commonly utilized in automotive, industrial power supplies, and battery management systems. It is supplied in tape and reel packaging.
Additional Information
Series: SENSEFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.2A (Ta), 149A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta), 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SO-8FL |
| Drive Voltage (Max Rds On, Min Rds On) | 3.2V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4830 pF @ 12 V |
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