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NTMFS4854NST1G

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NTMFS4854NST1G

MOSFET N-CH 25V 15.2A/149A SO8FL

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4854NST1G is a 25V N-Channel SENSEFET® power MOSFET designed for efficient power management applications. This device features a low on-resistance of 2.5mOhm at 15A and 10V Vgs, with a continuous drain current capability of 15.2A at 25°C ambient and 149A at 25°C case temperature. Its SO-8FL package (8-PowerTDFN) offers excellent thermal performance, enabling up to 900mW power dissipation at 25°C ambient and 86.2W at 25°C case. Key electrical characteristics include a gate charge (Qg) of 85 nC maximum at 11.5V and input capacitance (Ciss) of 4830 pF maximum at 12V Vds. The SENSEFET® technology integrates a current sense functionality, making it suitable for applications in automotive, industrial, and power supply sectors requiring precise current monitoring and control. The operating temperature range is -55°C to 150°C.

Additional Information

Series: SENSEFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.2A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSO-8FL
Drive Voltage (Max Rds On, Min Rds On)3.2V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs85 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds4830 pF @ 12 V

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