NTMFS4852NT3G
MOSFET N-CH 30V 16A/155A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4852NT3G is an N-Channel Power MOSFET designed for demanding automotive and industrial applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 16A at 25°C ambient temperature, scaling to 155A at 25°C case temperature. With a low Rds(on) of 2.1mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 900mW (Ta) and 86.2W (Tc). Key electrical characteristics include a gate charge (Qg) of 71.3 nC (max) at 10V Vgs and input capacitance (Ciss) of 4970 pF (max) at 12V Vds. It supports drive voltages from 4.5V to 10V and has a gate-source voltage range of ±20V, with a threshold voltage (Vgs(th)) of 2.5V (max) at 250µA. The NTMFS4852NT3G utilizes MOSFET technology and is provided in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 155A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta), 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4970 pF @ 12 V |
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