NTMFS4852NT1G
MOSFET N-CH 30V 16A/155A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4852NT1G is an N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 30V, this component offers a continuous drain current (Id) of 16A at ambient temperature and a significant 155A at case temperature. Its low on-resistance (Rds On) of a maximum 2.1mOhm at 30A and 10V gate drive ensures efficient power transfer.
The NTMFS4852NT1G is housed in a compact 5-DFN (5x6) 8-SOFL package, suitable for surface mounting. With a maximum power dissipation of 900mW (Ta) and 86.2W (Tc), it handles thermal management effectively. Key electrical characteristics include a gate charge (Qg) of 71.3 nC at 10V and input capacitance (Ciss) of 4970 pF at 12V. Operating across a temperature range of -55°C to 150°C, this MOSFET is utilized in automotive, industrial, and power supply applications requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 155A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta), 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4970 pF @ 12 V |
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