NTMFS4851NT1G
MOSFET N-CH 30V 9.5A/66A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4851NT1G is an N-Channel Power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current (Id) of 9.5A at ambient temperature and 66A at case temperature. With a low on-resistance (Rds On) of 5.9mOhm at 30A and 10V, it minimizes conduction losses. The MOSFET is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mount assembly. Key electrical characteristics include a Gate Charge (Qg) of 20 nC at 4.5V and an input capacitance (Ciss) of 1850 pF at 12V. The operating temperature range is -55°C to 150°C. This component is widely utilized in automotive and industrial power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 12 V |