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NTMFS4849NT1G

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NTMFS4849NT1G

MOSFET N-CH 30V 10.2A/71A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4849NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers high continuous drain current capabilities of 10.2A at ambient temperature and 71A at case temperature. Its low on-resistance of 5.1mOhm at 30A and 10V gate drive, coupled with a maximum gate charge of 22 nC at 4.5V, facilitates efficient switching. The MOSFET operates within a temperature range of -55°C to 150°C and supports a maximum gate-source voltage of ±16V. With a maximum power dissipation of 870mW (Ta) and 42.4W (Tc), it is suitable for power management solutions. The component is housed in a 5-DFN (5x6) package, commonly referred to as 8-PowerTDFN with 5 leads, and is supplied on tape and reel. This MOSFET finds application in areas such as automotive, industrial power control, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.2A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs5.1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2040 pF @ 12 V

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