NTMFS4847NAT1G
MOSFET N-CH 30V 11.5A/85A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4847NAT1G is an N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 11.5 A at typical ambient temperature (Ta) and 85 A at case temperature (Tc). With a low on-resistance (Rds On) of 4.1 mOhm at 30 A and 10 V, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 11.5 V, with a typical gate charge (Qg) of 28 nC at 4.5 V. Input capacitance (Ciss) is specified at a maximum of 2614 pF at 12 V. The NTMFS4847NAT1G is housed in an 8-PowerTDFN, 5-lead package, with a 5x6 (8-SOFL) footprint, suitable for surface mounting. Maximum power dissipation is 880 mW (Ta) and 48.4 W (Tc). This MOSFET is utilized in automotive, industrial power supply, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 880mW (Ta), 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2614 pF @ 12 V |
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