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NTMFS4846NT1G

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NTMFS4846NT1G

MOSFET N-CH 30V 12.7A/100A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4846NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and offers a continuous drain current of 12.7A at 25°C ambient and 100A at 25°C case temperature. The low on-resistance of 3.4mOhm at 30A and 10V Vgs makes it suitable for efficient power switching. Key parameters include a gate charge of 53 nC at 11.5V Vgs and an input capacitance of 3250 pF at 12V Vds. The device is housed in a 5-DFN (5x6) package, identified as 8-PowerTDFN, 5 Leads, and supplied on tape and reel. Its robust thermal performance is evident in the maximum power dissipation of 890mW (Ta) and 55.5W (Tc). This MOSFET is utilized across various industries including automotive and industrial power management systems where high efficiency and thermal management are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 12 V

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