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NTMFS4845NT1G

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NTMFS4845NT1G

MOSFET N-CH 30V 13.7A/115A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4845NT1G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 30 V drain-source voltage (Vdss) and a continuous drain current capability of 13.7 A at ambient temperature and 115 A at case temperature, this component offers robust performance. Its low on-resistance of 2.9 mOhm at 30 A and 10 V Vgs makes it highly efficient. The device is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key parameters include a maximum gate charge of 62 nC at 11.5 V and input capacitance of 3720 pF at 12 V. Operating across a temperature range of -55°C to 150°C, the NTMFS4845NT1G is utilized in power management, automotive, and industrial automation sectors. It is supplied on tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.7A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds3720 pF @ 12 V

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