NTMFS4841NT3G
MOSFET N-CH 30V 8.3A/57A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4841NT3G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 8.3A under typical ambient conditions (Ta) and 57A when measured at the drain lead case temperature (Tc). Its low on-resistance (Rds On) of 7mOhm at 30A and 10V gate drive ensures minimal power loss during conduction.
With a maximum power dissipation of 870mW (Ta) and 41.7W (Tc), the NTMFS4841NT3G is suitable for demanding thermal environments. The device operates across a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 17 nC at 4.5V and an input capacitance (Ciss) of 1436 pF at 12V. The MOSFET is housed in an 8-PowerTDFN, 5-lead package (5x6, 8-SOFL) for surface mounting, utilizing Tape & Reel packaging for automated assembly. This component is commonly employed in automotive, industrial, and consumer electronics power control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1436 pF @ 12 V |
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