NTMFS4841NT1G
MOSFET N-CH 30V 8.3A/57A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4841NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V Drain-Source Voltage (Vdss) and offers a significant current handling capability of 8.3A continuous drain current at 25°C ambient temperature (Ta) and up to 57A continuous drain current at 25°C case temperature (Tc). With a low on-resistance (Rds On) of 7mOhm maximum at 30A and 10V gate drive, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 17 nC at 4.5V and input capacitance (Ciss) of 1436 pF at 12V. Power dissipation is rated at 870mW (Ta) and 41.7W (Tc). The NTMFS4841NT1G is housed in a 5-DFN (5x6) package with 8-SOFL lead count, suitable for surface mount configurations. Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1436 pF @ 12 V |
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