NTMFS4841NHT3G
MOSFET N-CH 30V 8.6A/59A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4841NHT3G is an N-Channel Power MOSFET designed for high-performance applications. This device features a 30V drain-to-source voltage (Vdss) and supports continuous drain currents of 8.6A at ambient temperature and 59A at case temperature. With a maximum on-resistance (Rds On) of 7mOhm at 30A and 10V gate drive, it offers efficient power switching. The MOSFET is housed in a 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5-lead variant, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 33 nC at 11.5V and an input capacitance (Ciss) of 2113 pF at 12V. The operating temperature range is -55°C to 150°C. This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2113 pF @ 12 V |
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