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NTMFS4839NT1G

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NTMFS4839NT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4839NT1G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30V drain-source breakdown voltage and offers a continuous drain current of 9.5A at ambient temperature and 64A at case temperature. Its low on-resistance of 5.5mOhm at 30A and 10V Vgs is achieved with a 4.5V gate drive. The device boasts a maximum power dissipation of 870mW ambient and 41.7W at case temperature. Packaged in an 8-PowerTDFN, 5 leads (5x6) 5-DFN (8-SOFL) format, it is supplied on tape and reel. Key electrical characteristics include a gate charge of 18nC at 4.5V and input capacitance of 1588pF at 12V. This MOSFET operates across a temperature range of -55°C to 150°C. Applications for this technology are commonly found in automotive and industrial power conversion systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)870mW (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1588 pF @ 12 V

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