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NTMFS4839NHT3G

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NTMFS4839NHT3G

MOSFET N-CH 30V 9.5A/64A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4839NHT3G is an N-Channel Power MOSFET designed for demanding applications. This component offers a 30V drain-source breakdown voltage and features a low Rds(on) of 5.5mOhm at 30A and 10V Vgs. Continuous drain current is rated at 9.5A (Ta) and 64A (Tc), with a maximum power dissipation of 870mW (Ta) and 42.4W (Tc). The device supports gate drive voltages from 4.5V to 11.5V, with a maximum gate charge of 43.5 nC at 11.5V. Input capacitance (Ciss) is 2354 pF at 12V. The NTMFS4839NHT3G is housed in an 8-PowerTDFN, 5 Lead (5x6) package and is supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for power management, automotive, and industrial applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds2354 pF @ 12 V

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