NTMFS4839NHT1G
MOSFET N-CH 30V 9.5A/64A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4839NHT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a drain-source breakdown voltage (Vdss) of 30V and offers continuous drain current capabilities of 9.5A at a given ambient temperature (Ta) and 64A at a specific case temperature (Tc). With a low on-resistance (Rds(on)) of 5.5mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET is specified for drive voltages ranging from 4.5V to 11.5V. It exhibits typical gate charge (Qg) of 43.5 nC at 11.5V and input capacitance (Ciss) of 2354 pF at 12V. The NTMFS4839NHT1G supports a maximum power dissipation of 870mW (Ta) or 42.4W (Tc). Packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) configuration, it is suitable for surface-mount assembly and supplied on tape and reel. Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta), 42.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43.5 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2354 pF @ 12 V |
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