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NTMFS4837NT1G

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NTMFS4837NT1G

MOSFET N-CH 30V 10A/74A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4837NT1G is a 30V N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a low on-resistance of 5mOhm maximum at 30A and 10V Vgs, with a drive voltage range of 4.5V to 11.5V. It offers a continuous drain current of 10A at 25°C ambient and 74A at 25°C case temperature, with a maximum power dissipation of 880mW (Ta) or 47.2W (Tc). The MOSFET is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key parameters include a gate charge of 22 nC at 4.5V and an input capacitance (Ciss) of 2048 pF at 12V. Operating temperature range is -55°C to 150°C. This component is utilized in automotive and industrial power conversion systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2048 pF @ 12 V

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