NTMFS4837NHT3G
MOSFET N-CH 30V 10.2A/75A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4837NHT3G is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 10.2A at typical ambient conditions and 75A under pulsed or case temperature controlled operation. With a maximum on-resistance of 5mOhm at 30A and 10V, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 11.5V, with a maximum gate charge of 23.8 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 3016 pF at 12V. The NTMFS4837NHT3G is housed in an 8-PowerTDFN, 5-lead package, with a supplier device package of 5-DFN (5x6) (8-SOFL), designed for surface mounting. Power dissipation is rated at 880mW (Ta) and 48W (Tc). This MOSFET is suitable for use in power management, automotive, and industrial automation sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 880mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3016 pF @ 12 V |
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