NTMFS4836NT1G
MOSFET N-CH 30V 11A/90A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4836NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and offers a continuous drain current of 11A at 25°C ambient and 90A continuous at 25°C case temperature. With a low Rds(On) of 4mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device is housed in an 8-PowerTDFN, 5-lead package (5x6 footprint) suitable for surface mounting. Key parameters include a gate charge (Qg) of 28 nC at 4.5V Vgs and input capacitance (Ciss) of 2677 pF at 12V Vds. Maximum power dissipation is 890mW (Ta) and 55.6W (Tc). This MOSFET operates across a temperature range of -55°C to 150°C (TJ). The NTMFS4836NT1G is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta), 55.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2677 pF @ 12 V |