NTMFS4835NT3G
MOSFET N-CH 30V 13A/130A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4835NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 13A at 25°C ambient and 130A under typical case conditions. With a low Rds On of 3.5mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device supports a gate drive range from 4.5V to 11.5V, with a maximum gate charge (Qg) of 52 nC at 11.5 V and input capacitance (Ciss) of 3100 pF at 12 V. It is housed in an 8-PowerTDFN, 5-Lead package (5-DFN 5x6) for efficient heat dissipation, achieving a maximum power dissipation of 890mW (Ta) and 62.5W (Tc). Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for power management and switching applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 12 V |