NTMFS4835NT1G
MOSFET N-CH 30V 13A/130A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4835NT1G is an N-Channel Power MOSFET, engineered for high-efficiency power conversion applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 13A at ambient temperature and 130A at case temperature. The Rds(On) is specified at a low 3.5mOhm maximum at 30A and 10V Vgs. Operating with a gate drive voltage ranging from 4.5V to 11.5V, it exhibits a maximum gate charge of 52 nC at 11.5V and a maximum input capacitance (Ciss) of 3100 pF at 12V. With a maximum power dissipation of 890mW (Ta) and 62.5W (Tc), this MOSFET is housed in a 5-DFN (5x6) package, also known as 8-PowerTDFN with 5 leads, suitable for surface mounting. The operating temperature range is -55°C to 150°C (TJ). Applications include power management, automotive, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 12 V |
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