NTMFS4833NT3G
MOSFET N-CH 30V 16A/156A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4833NT3G is a 30V N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a low Rds(on) of 2mOhm at 30A and 10V Vgs, ensuring efficient power transfer. Continuous drain current is rated at 16A at ambient temperature and 156A at case temperature. Maximum power dissipation is 910mW (Ta) and 125W (Tc).
Key electrical parameters include a Gate Charge (Qg) of 88 nC maximum at 11.5V Vgs and an input capacitance (Ciss) of 5600 pF maximum at 12V Vds. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) with a maximum Vgs of ±20V. The NTMFS4833NT3G is housed in a 5-DFN (5x6) package with 8-SOFL pin count, suitable for surface mount applications. This component finds utility in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 156A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 910mW (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 12 V |
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