NTMFS4833NT1G
MOSFET N-CH 30V 16A/156A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4833NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-to-source breakdown voltage and offers a continuous drain current capability of 16 A at a typical ambient temperature (Ta) and 156 A at a case temperature (Tc). With a maximum on-resistance (Rds On) of 2 mOhm at 30 A and 10 V, it ensures efficient power transfer. The MOSFET is available in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 88 nC at 11.5 V and input capacitance (Ciss) of 5600 pF at 12 V. Power dissipation is rated at 910 mW (Ta) and 125 W (Tc). This component is utilized across various industries, including automotive, industrial power, and consumer electronics, where robust power switching and low on-resistance are critical. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 156A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 910mW (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 12 V |
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