NTMFS4833NST3G
MOSFET N-CH 30V 16A/156A SO-8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4833NST3G is a N-Channel SENSEFET® MOSFET designed for high-density power management applications. This component features a drain-to-source voltage (Vdss) of 30V and supports continuous drain current (Id) of 16A at ambient temperature and 156A at case temperature. With a maximum on-resistance (Rds On) of 2.2mOhm at 30A and 10V, it offers efficient power transfer. The device exhibits a low gate charge (Qg) of 86 nC at 11.5V and an input capacitance (Ciss) of 5250 pF at 12V. Power dissipation is rated at 900mW (Ta) and 86.2W (Tc). Operating across a temperature range of -55°C to 150°C, this SO-8FL packaged MOSFET is suitable for use in automotive and industrial power systems.
Additional Information
Series: SENSEFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 156A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta), 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SO-8FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5250 pF @ 12 V |
Request a Quote
Clients Also Buy
NTMFS4854NST3G
MOSFET N-CH 25V 15.2A/149A SO8FL
NTMFS4833NST1G
MOSFET N-CH 30V 16A/156A SO-8FL
NTMFS4854NST1G
MOSFET N-CH 25V 15.2A/149A SO8FL
