NTMFS4833NST1G
MOSFET N-CH 30V 16A/156A SO-8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4833NST1G is an N-Channel SENSEFET® power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage and offers a continuous drain current capability of 16A at 25°C ambient and 156A under pulsed conditions at 25°C case temperature. Its low on-resistance of 2.2mOhm maximum at 30A and 10V gate drive, coupled with a maximum power dissipation of 900mW (Ta) or 86.2W (Tc), makes it suitable for demanding thermal environments. The SO-8FL package, also identified as 8-PowerTDFN, facilitates efficient heat dissipation for surface mount applications. Key parameters include a gate charge of 86 nC at 11.5V and input capacitance of 5250 pF at 12V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive systems.
Additional Information
Series: SENSEFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 156A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta), 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SO-8FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5250 pF @ 12 V |
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