NTMFS4833NAT1G
MOSFET N-CH 30V 16A/191A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4833NAT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source breakdown voltage and offers a continuous drain current capability of 16A at ambient temperature and 191A at case temperature. With a low on-resistance of 1.9mOhm at 30A and 10V gate-source voltage, it minimizes conduction losses. The NTMFS4833NAT1G utilizes advanced MOSFET technology and is packaged in a 5-DFN (5x6) (8-SOFL) surface-mount configuration, supplied on tape and reel. Key electrical parameters include a maximum gate charge of 150 nC at 11.5V and a maximum input capacitance of 7500 pF at 12V. The threshold voltage is rated at 2.5V maximum at 250µA. This device is suitable for use in power management, automotive, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 191A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 12 V |
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