NTMFS4825NFET1G
MOSFET N-CH 30V 17A/171A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4825NFET1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 17A at ambient temperature and 171A at case temperature. With a low on-resistance of 2mOhm at 22A and 10V, it ensures efficient power delivery. The device is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, facilitating surface mount assembly. Key parameters include a gate charge (Qg) of 40.2 nC at 4.5V and input capacitance (Ciss) of 5660 pF at 15V. Maximum power dissipation is 950mW at ambient and 96.2W at case temperature. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 171A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta), 96.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 15 V |
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