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NTMFS4823NT1G

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NTMFS4823NT1G

MOSFET N-CH 30V 6.9A/30A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4823NT1G is an N-Channel Power MOSFET designed for demanding applications. This device offers a 30V drain-source voltage (Vdss) and supports continuous drain current of 6.9A at 25°C ambient temperature (Ta) and 30A at 25°C case temperature (Tc). With a low on-resistance of 10.6mOhm maximum at 30A and 10V, it minimizes conduction losses. Key specifications include a gate charge (Qg) of 13nC maximum at 11.5V and input capacitance (Ciss) of 795pF maximum at 15V. The NTMFS4823NT1G features a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 leads, suitable for surface mounting. Maximum power dissipation is 860mW (Ta) or 32.5W (Tc), with an operating temperature range of -55°C to 150°C. This component is frequently utilized in power management, automotive, and industrial automation sectors. The device is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs10.6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)860mW (Ta), 32.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds795 pF @ 15 V

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