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NTMFS4821NT1G

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NTMFS4821NT1G

MOSFET N-CH 30V 8.8A/58.5A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4821NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 8.8A at ambient temperature and 58.5A at case temperature. With a low on-resistance of 6.95mOhm at 30A and 10V gate drive, it delivers efficient power switching. The device is housed in an 8-PowerTDFN, 5-lead package, specified as 5-DFN (5x6) (8-SOFL), suitable for surface mounting. Typical gate charge is 16nC at 4.5V, with input capacitance (Ciss) maxing out at 1400pF at 12V. Maximum power dissipation is rated at 870mW (Ta) and 38.5W (Tc). This MOSFET operates across an industrial temperature range of -55°C to 150°C. It finds application in power management, automotive systems, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 58.5A (Tc)
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)870mW (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 12 V

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